BSL308CH6327XTSA1 vs BSP316PH6327XTSA1 Comparison
Detailed side-by-side comparison of BSL308CH6327XTSA1 by Infineon and BSP316PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223
BSP316PH6327XTSA1 β ActiveSpecification Comparison
| Parameter | BSL308CH6327XTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.21 | $0.21 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOSβ’ low-voltage power MOSFETs | β |
| Configuration | Complementary dual MOSFET (1 N-channel + 1 P-channel) | β |
| Package | PG-TSOP6-6 (TSOP-6, 6 pins) | PG-SOT223-4 (TO-261-4) |
| Drain-to-Source Voltage (VDS) | 30 V | -100 V |
| Continuous Drain Current - N-channel (ID, N-ch) | 2.3 A | β |
| Continuous Drain Current - P-channel (ID, P-ch) | 2 A | β |
| Total Power Dissipation (Ptot) | 500 mW | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical] |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) N-ch] | β |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) P-ch] | β |
| Total Gate Charge (Qg) | 5 nC @ 10 V | β |
| Input Capacitance (Ciss) | 18 pF | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | -55 C to +150 C (junction) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Automotive Qualified | Yes (per Infineon part-number suffix, automotive grade) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes (per Infineon product family convention) | β |
| FET Type | β | P-Channel |
| Continuous Drain Current (ID) at TA=25C | β | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | β | 1.8 W |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Number of Pins | β | 3 + thermal tab |
| Channel Mode | β | Enhancement |
| Technology | β | SIPMOS (P-channel MOSFET) |
| Packaging | β | Tape & Reel (H6327 suffix) |