BSL308PEH6327XTSA1 vs BSP315PH6327XTSA1 Comparison
Detailed side-by-side comparison of BSL308PEH6327XTSA1 by Infineon and BSP315PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSL308PEH6327XTSA1 | BSP315PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.21 | $0.31 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS | β |
| FET Type | 2x P-Channel (Dual) | P-Channel |
| Drain-Source Voltage (VDS) | -30 V | -60 V |
| Continuous Drain Current (ID) | -2 A (Ta) | -1.17 A (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) | 1.8 W (Ta) |
| Package | PG-TSOP6-6 (TSOT-23-6) | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) |
| Configuration | Dual, common source | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +150 C (TJ) | β |
| Automotive Qualification | AEC-Q101 | β |
| Number of Pins | 6 | β |
| Channel Mode | Enhancement | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V] | [DATA_NEEDED: RDS(on) at VGS=-10 V] |
| RoHS Status | Compliant | β |
| Technology | β | OptiMOS (enhancement mode) |
| Gate-Source Voltage (VGS) | β | Β±20 V (max) |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Operating Temperature Range | β | -55 C to +150 C (junction) |
| Avalanche Energy Rated | β | Yes (per datasheet) |
| Lead-Free / RoHS | β | Yes / Compliant |
| MSL Level | β | 1 (per JEDEC J-STD-020) |