BSO613SPVGXUMA1 vs BSP135H6327XTSA1 Comparison
Detailed side-by-side comparison of BSO613SPVGXUMA1 by Infineon and BSP135H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSO613SPVGXUMA1 - P-Ch 60V 3.44A MOSFET | Infineon | Load Switch
BSO613SPVGXUMA1 β Active
Specification Comparison
| Parameter | BSO613SPVGXUMA1 | BSP135H6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.43 |
| FET Type | P-Channel | N-Channel, Depletion Mode |
| Drain-Source Voltage (VDS) | -60 V | 600 V |
| Continuous Drain Current (ID) at TA=25C | -3.44 A | β |
| Power Dissipation (PD) at TA=25C | 2.5 W | β |
| Package | PG-DSO-8-6 (Power-SO-8) | PG-SOT223-4 (SOT-223-3 plus tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS (Trench) | SIPMOS (planar DMOS) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | β |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max at VGS=10V] | β |
| RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) max at VGS=4.5V] | β |
| Operating Temperature Range | -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) | -55C to +150C (junction, typical) |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-V] | β |
| MSL Level | MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Avalanche Rated | Yes (per Infineon OptiMOS family) | β |
| Pin Count | 8 (6 active, 2 thermal/NC) | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSP135H6327XTSA1 |
| Continuous Drain Current (ID) | β | 120 mA |
| Power Dissipation (PD) | β | 1.8 W |
| On-Resistance RDS(on) max | β | 45 ohm at VGS = 0 V |
| On-Resistance RDS(on) | β | 25 ohm (typical, per digchip) |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Operating Mode | β | Normally ON (depletion) |