BSP125H6327XTSA1 vs BSR315PH6327XTSA1 Comparison
Detailed side-by-side comparison of BSP125H6327XTSA1 by Infineon and BSR315PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSP125H6327XTSA1 | BSR315PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.22 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSP125H6327XTSA1 | BSR315PH6327XTSA1 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | SIPMOS (Small Signal Power MOSFET) | β |
| Drain-Source Voltage (VDS) | 600 V | -60 V |
| Continuous Drain Current (ID) | 120 mA (Ta) | -620 mA (Ta) |
| Power Dissipation (PD) | 1.8 W (Ta) | 500 mW (Ta) |
| Package | PG-SOT223-4 (SOT-223-3 + tab) | PG-SC59-3 / SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (TJ) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | Β±20 V (max VGS) |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Configuration | Single | β |
| Channel Mode | Enhancement | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (Unlimited) | β |
| Qualification | Automotive / Industrial grade | β |
| Series | β | OptiMOS P-Channel |
| FET Type | β | P-Channel, Enhancement Mode |
| On-State Resistance (RDS(on)) | β | 800 mOhm @ -620 mA, -10 V |
| Input Capacitance (Ciss) | β | 176 pF @ 25 V |
| Total Gate Charge (Qg) | β | 6 nC @ 10 V |
| Operating Temperature Range | β | -55 C to +150 C (TJ) |
| Pin Count | β | 3 |
| Packaging | β | Tape & Reel (TR) |
| Automotive Qualified | β | Yes (per Infineon product family marking) |