BSP125H6327XTSA1 vs BSR316PH6327XTSA1 Comparison
Detailed side-by-side comparison of BSP125H6327XTSA1 by Infineon and BSR316PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSP125H6327XTSA1 | BSR316PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.22 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSP125H6327XTSA1 | BSR316PH6327XTSA1 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | SIPMOS (Small Signal Power MOSFET) | β |
| Drain-Source Voltage (VDS) | 600 V | -100 V |
| Continuous Drain Current (ID) | 120 mA (Ta) | β |
| Power Dissipation (PD) | 1.8 W (Ta) | β |
| Package | PG-SOT223-4 (SOT-223-3 + tab) | PG-SC59-3 (SC-59 / SOT-23 equivalent) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (TJ) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Configuration | Single | β |
| Channel Mode | Enhancement | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (Unlimited) | 1 |
| Qualification | Automotive / Industrial grade | Automotive |
| Series | β | OptiMOS |
| FET Type | β | P-Channel Enhancement Mode |
| Continuous Drain Current (ID) at TA | β | -360 mA |
| Continuous Drain Current (ID) at TC | β | [DATA_NEEDED: ID at TC specific value] |
| On-State Resistance RDS(on) max | β | 1800 mOhm at VGS = -10 V |
| Gate Threshold Voltage VGS(th) | β | -1.7 V typical, -2.5 V max |
| Gate Charge Qg | β | [DATA_NEEDED: Qg total] |
| Power Dissipation (Tc) | β | 500 mW |
| Operating Temperature Range | β | -55 C to +150 C (junction) |
| Polarity | β | P-Channel |