BSP125H6327XTSA1 vs IRLL024ZTRPBF Comparison
Detailed side-by-side comparison of BSP125H6327XTSA1 by Infineon and IRLL024ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSP125H6327XTSA1 | IRLL024ZTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Number | BSP125H6327XTSA1 | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | SIPMOS (Small Signal Power MOSFET) | HEXFET Power MOSFET (trench-gate) |
| Drain-Source Voltage (VDS) | 600 V | β |
| Continuous Drain Current (ID) | 120 mA (Ta) | β |
| Power Dissipation (PD) | 1.8 W (Ta) | β |
| Package | PG-SOT223-4 (SOT-223-3 + tab) | SOT-223 (TO-261-4) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (TJ) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Configuration | Single | β |
| Channel Mode | Enhancement | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (Unlimited) | 1 (unlimited floor life) |
| Qualification | Automotive / Industrial grade | β |
| FET Type | β | N-Channel enhancement-mode |
| Drain-Source Voltage (VDS) max | β | 55 V |
| Gate-Source Voltage (VGS) max | β | Β±16 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 5 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | β | 60 mΞ© |
| Total Gate Charge (Qg) typical | β | 7 nC |
| Power Dissipation (PD) at TA=25Β°C | β | 1 W |
| Operating Junction Temperature (TJ) | β | -55 Β°C to +150 Β°C |