BSP125H6433XTMA1 vs BSP89H6327XTSA1 Comparison
Detailed side-by-side comparison of BSP125H6433XTMA1 by Infineon and BSP89H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSP125H6433XTMA1 | BSP89H6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.39 |
| FET Type | N-Channel Enhancement Mode | β |
| Drain-Source Voltage (V(BR)DSS) | 600 V | β |
| Continuous Drain Current (ID) at TA | 120 mA | β |
| Power Dissipation (PD) at TA | 1.8 W | β |
| Package | PG-SOT223-4 (3+tab) | PG-SOT223-4 (SOT-223, 4-pin with tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per ordering code H6327) |
| Lead Plating | Pb-free | β |
| RoHS Status | Compliant | Compliant |
| Operating Temperature Range | -55C to +150C (TJ) | -55 Β°C to +150 Β°C (Tj) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | [DATA_NEEDED: typical VGS(th) value] |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total Qg] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | β |
| Thermal Resistance RthJA | [DATA_NEEDED: theta_JA on standard PCB] | β |
| Configuration | Single N-Channel MOSFET | β |
| Transistor Type | β | N-Channel MOSFET, enhancement mode |
| Technology | β | SIPMOS (planar power MOS) |
| Drain-Source Breakdown Voltage (V(BR)DSS) | β | 240 V (VGS=0, ID=250 Β΅A) |
| Continuous Drain Current (ID) at Ta=25Β°C | β | 0.35 A |
| Total Power Dissipation (Ptot) at Ta=25Β°C | β | 1.8 W (on FR4 PCB, 6 cmΒ² cooling area) |
| On-State Resistance (RDS(on)) max | β | 6 Ξ© (typical) |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Thermal Resistance Junction-Ambient (RthJA) | β | 70 K/W (6 cmΒ² PCB) |
| Thermal Resistance Junction-Solder Point (RthJS) | β | 25 K/W |
| Logic-Level Gate Drive | β | Yes (logic-level compatible) |
| dv/dt Rated | β | Yes |
| ESD Protection | β | Internal gate-source Zener |