BSP129H6327XTSA1 vs BSL308CH6327XTSA1 Comparison
Detailed side-by-side comparison of BSP129H6327XTSA1 by Infineon and BSL308CH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSP129H6327XTSA1 - 240V N-Ch Depletion MOSFET | Infineon | SOT-223
BSP129H6327XTSA1 β Active
Specification Comparison
| Parameter | BSP129H6327XTSA1 | BSL308CH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.30 | $0.21 |
| FET Type | N-Channel, Depletion Mode | β |
| Drain-Source Voltage (VDS) | 240 V | β |
| Continuous Drain Current (ID) at TA=25C | 350 mA | β |
| On-Resistance RDS(on) max | 4.2 ohm (some sources 6 ohm) | β |
| Power Dissipation (PD) at TA=25C | 1.8 W | β |
| Package | PG-SOT223-4 (SOT-223, 3+Tab) | PG-TSOP6-6 (TSOP-6, 6 pins) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +150 C (junction) | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Threshold Voltage VGS(off) | [DATA_NEEDED: depletion threshold VGS(off)] | β |
| dv/dt Ruggedness | Yes (rated) | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Process Technology | SIPMOS (vertical DMOS) | β |
| Drain Terminal | Tab (pin 4) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOSβ’ low-voltage power MOSFETs |
| Configuration | β | Complementary dual MOSFET (1 N-channel + 1 P-channel) |
| Drain-to-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current - N-channel (ID, N-ch) | β | 2.3 A |
| Continuous Drain Current - P-channel (ID, P-ch) | β | 2 A |
| Total Power Dissipation (Ptot) | β | 500 mW |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | β | [DATA_NEEDED: RDS(on) N-ch] |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | β | [DATA_NEEDED: RDS(on) P-ch] |
| Total Gate Charge (Qg) | β | 5 nC @ 10 V |
| Input Capacitance (Ciss) | β | 18 pF |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C |
| Automotive Qualified | β | Yes (per Infineon part-number suffix, automotive grade) |
| Halogen-Free | β | Yes (per Infineon product family convention) |