BSP129H6327XTSA1 vs BSP135H6906XTSA1 Comparison

Detailed side-by-side comparison of BSP129H6327XTSA1 by Infineon and BSP135H6906XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSP135H6906XTSA1 BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 βœ“ Active

Specification Comparison

Parameter BSP129H6327XTSA1 BSP135H6906XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.30 $0.78
FET Type N-Channel, Depletion Mode N-Channel Depletion Mode
Drain-Source Voltage (VDS) 240 V β€”
Continuous Drain Current (ID) at TA=25C 350 mA 120 mA
On-Resistance RDS(on) max 4.2 ohm (some sources 6 ohm) β€”
Power Dissipation (PD) at TA=25C 1.8 W β€”
Package PG-SOT223-4 (SOT-223, 3+Tab) PG-SOT223-4 (SOT-223, 3+tab)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 C to +150 C (junction) β€”
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] β€”
Threshold Voltage VGS(off) [DATA_NEEDED: depletion threshold VGS(off)] β€”
dv/dt Ruggedness Yes (rated) β€”
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per datasheets.com parametric record)
RoHS Status Compliant Compliant
Lead-Free Yes Yes
MSL Level [DATA_NEEDED: MSL rating] 1 (unlimited)
Process Technology SIPMOS (vertical DMOS) β€”
Drain Terminal Tab (pin 4) β€”
Drain-Source Voltage (VDS) Max β€” 600 V
RDS(on) Max at VGS=0V β€” 45 Ohm
Power Dissipation (PD) Max β€” 1.8 W
Gate-Source Voltage (VGS) Max β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(off)) β€” Depletion mode (normally-on)
Operating Temperature Range β€” -55C to +150C
Pin Count β€” 4 (3 leads + drain tab)
Technology β€” SIPMOS (planar high-voltage)

Datasheets & Resources

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