BSP135H6327XTSA1 vs BSP129H6906XTSA1 Comparison
Detailed side-by-side comparison of BSP135H6327XTSA1 by Infineon and BSP129H6906XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSP135H6327XTSA1 | BSP129H6906XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.43 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSP135H6327XTSA1 | BSP129H6906XTSA1 |
| FET Type | N-Channel, Depletion Mode | N-Channel, Depletion Mode |
| Drain-Source Voltage (VDS) | 600 V | 240 V |
| Continuous Drain Current (ID) | 120 mA | β |
| Power Dissipation (PD) | 1.8 W | β |
| On-Resistance RDS(on) max | 45 ohm at VGS = 0 V | β |
| On-Resistance RDS(on) | 25 ohm (typical, per digchip) | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Operating Mode | Normally ON (depletion) | Normally-On (Depletion) |
| Package | PG-SOT223-4 (SOT-223-3 plus tab) | PG-SOT223-4 (SOT-223) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | SIPMOS (planar DMOS) | β |
| Operating Temperature Range | -55C to +150C (junction, typical) | [DATA_NEEDED: TJ max] |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (unlimited floor life) |
| Continuous Drain Current (ID) at TA=25C | β | 350 mA |
| Power Dissipation (PD) at TA=25C | β | 1.8 W |
| Drain-Source On-Resistance (RDS(on)) | β | 6 Ohm (max) |
| Gate-Source Pinch-Off Voltage | β | [DATA_NEEDED: VGS(off) typical value] |
| Number of Pins | β | 3 functional + 1 tab (4 leads) |
| ESD Protection | β | Integrated Zener diodes on gate |