BSP135H6327XTSA1 vs BSP315PH6327XTSA1 Comparison
Detailed side-by-side comparison of BSP135H6327XTSA1 by Infineon and BSP315PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSP135H6327XTSA1 | BSP315PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.43 | $0.31 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSP135H6327XTSA1 | β |
| FET Type | N-Channel, Depletion Mode | P-Channel |
| Drain-Source Voltage (VDS) | 600 V | -60 V |
| Continuous Drain Current (ID) | 120 mA | -1.17 A (Ta) |
| Power Dissipation (PD) | 1.8 W | 1.8 W (Ta) |
| On-Resistance RDS(on) max | 45 ohm at VGS = 0 V | β |
| On-Resistance RDS(on) | 25 ohm (typical, per digchip) | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | Β±20 V (max) |
| Operating Mode | Normally ON (depletion) | β |
| Package | PG-SOT223-4 (SOT-223-3 plus tab) | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | SIPMOS (planar DMOS) | OptiMOS (enhancement mode) |
| Operating Temperature Range | -55C to +150C (junction, typical) | -55 C to +150 C (junction) |
| RoHS Status | Compliant | β |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=-10 V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Avalanche Energy Rated | β | Yes (per datasheet) |
| Lead-Free / RoHS | β | Yes / Compliant |