BSP135H6327XTSA1 vs BSP316PH6327XTSA1 Comparison
Detailed side-by-side comparison of BSP135H6327XTSA1 by Infineon and BSP316PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223
BSP316PH6327XTSA1 β ActiveSpecification Comparison
| Parameter | BSP135H6327XTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.43 | $0.21 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSP135H6327XTSA1 | β |
| FET Type | N-Channel, Depletion Mode | P-Channel |
| Drain-Source Voltage (VDS) | 600 V | β |
| Continuous Drain Current (ID) | 120 mA | β |
| Power Dissipation (PD) | 1.8 W | β |
| On-Resistance RDS(on) max | 45 ohm at VGS = 0 V | β |
| On-Resistance RDS(on) | 25 ohm (typical, per digchip) | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Operating Mode | Normally ON (depletion) | β |
| Package | PG-SOT223-4 (SOT-223-3 plus tab) | PG-SOT223-4 (TO-261-4) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | SIPMOS (planar DMOS) | SIPMOS (P-channel MOSFET) |
| Operating Temperature Range | -55C to +150C (junction, typical) | -55 C to +150 C (junction) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 |
| Drain-to-Source Voltage (VDS) | β | -100 V |
| Continuous Drain Current (ID) at TA=25C | β | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | β | 1.8 W |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Number of Pins | β | 3 + thermal tab |
| Channel Mode | β | Enhancement |
| Packaging | β | Tape & Reel (H6327 suffix) |