BSP135H6327XTSA1 vs BSP92PH6327XTSA1 Comparison

Detailed side-by-side comparison of BSP135H6327XTSA1 by Infineon and BSP92PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSP135H6327XTSA1 BSP135H6327XTSA1 - 600V N-Ch Depletion-Mode MOSFET | Infineon

BSP135H6327XTSA1 - 600V N-Ch Depletion-Mode MOSFET | Infineon

BSP135H6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSP135H6327XTSA1 BSP92PH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.43 $0.31
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSP135H6327XTSA1 β€”
FET Type N-Channel, Depletion Mode β€”
Drain-Source Voltage (VDS) 600 V -250 V
Continuous Drain Current (ID) 120 mA -260 mA (Ta)
Power Dissipation (PD) 1.8 W 1.8 W (Ta)
On-Resistance RDS(on) max 45 ohm at VGS = 0 V β€”
On-Resistance RDS(on) 25 ohm (typical, per digchip) β€”
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] β€”
Operating Mode Normally ON (depletion) β€”
Package PG-SOT223-4 (SOT-223-3 plus tab) PG-SOT223-4 (SOT-223-4)
Mounting Type Surface Mount Surface Mount
Technology SIPMOS (planar DMOS) β€”
Operating Temperature Range -55C to +150C (junction, typical) β€”
RoHS Status Compliant β€”
MSL Level 1 1 (unlimited)
Product Family β€” OptiMOS P-Channel Small-Signal Power MOSFET
Transistor Type β€” P-Channel Enhancement Mode MOSFET
Channel Polarity β€” P-Channel
Operating Temperature β€” -55C to +150C (Tj)
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical and min/max]
On-State Resistance (RDS(on)) β€” [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge]
Lead-Free / RoHS β€” Yes / Compliant
Pin Count β€” 4 (Gate, Drain, Drain, Source)

Datasheets & Resources

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