BSP135H6906XTSA1 vs BSP129H6327XTSA1 Comparison

Detailed side-by-side comparison of BSP135H6906XTSA1 by Infineon and BSP129H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSP135H6906XTSA1 BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 βœ“ Active

Specification Comparison

Parameter BSP135H6906XTSA1 BSP129H6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $0.30
FET Type N-Channel Depletion Mode N-Channel, Depletion Mode
Drain-Source Voltage (VDS) Max 600 V β€”
Continuous Drain Current (ID) at TA=25C 120 mA 350 mA
RDS(on) Max at VGS=0V 45 Ohm β€”
Power Dissipation (PD) Max 1.8 W β€”
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(off)) Depletion mode (normally-on) β€”
Operating Temperature Range -55C to +150C β€”
Package PG-SOT223-4 (SOT-223, 3+tab) PG-SOT223-4 (SOT-223, 3+Tab)
Mounting Type Surface Mount Surface Mount
Pin Count 4 (3 leads + drain tab) β€”
Technology SIPMOS (planar high-voltage) β€”
MSL Level 1 (unlimited) [DATA_NEEDED: MSL rating]
RoHS Status Compliant Compliant
Automotive Qualification AEC-Q101 (per datasheets.com parametric record) AEC-Q101 qualified
Lead-Free Yes Yes
Drain-Source Voltage (VDS) β€” 240 V
On-Resistance RDS(on) max β€” 4.2 ohm (some sources 6 ohm)
Power Dissipation (PD) at TA=25C β€” 1.8 W
Operating Temperature β€” -55 C to +150 C (junction)
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max rating]
Threshold Voltage VGS(off) β€” [DATA_NEEDED: depletion threshold VGS(off)]
dv/dt Ruggedness β€” Yes (rated)
Process Technology β€” SIPMOS (vertical DMOS)
Drain Terminal β€” Tab (pin 4)

Datasheets & Resources

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