BSP135H6906XTSA1 vs BSP316PH6327XTSA1 Comparison
Detailed side-by-side comparison of BSP135H6906XTSA1 by Infineon and BSP316PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223
BSP316PH6327XTSA1 β ActiveSpecification Comparison
| Parameter | BSP135H6906XTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.21 |
| FET Type | N-Channel Depletion Mode | P-Channel |
| Drain-Source Voltage (VDS) Max | 600 V | β |
| Continuous Drain Current (ID) at TA=25C | 120 mA | -680 mA |
| RDS(on) Max at VGS=0V | 45 Ohm | β |
| Power Dissipation (PD) Max | 1.8 W | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(off)) | Depletion mode (normally-on) | β |
| Operating Temperature Range | -55C to +150C | -55 C to +150 C (junction) |
| Package | PG-SOT223-4 (SOT-223, 3+tab) | PG-SOT223-4 (TO-261-4) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 4 (3 leads + drain tab) | β |
| Technology | SIPMOS (planar high-voltage) | SIPMOS (P-channel MOSFET) |
| MSL Level | 1 (unlimited) | 1 |
| RoHS Status | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (per datasheets.com parametric record) | β |
| Lead-Free | Yes | β |
| Drain-to-Source Voltage (VDS) | β | -100 V |
| Total Power Dissipation (Ptot) at TA=25C | β | 1.8 W |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Number of Pins | β | 3 + thermal tab |
| Channel Mode | β | Enhancement |
| Packaging | β | Tape & Reel (H6327 suffix) |