BSP149H6327XTSA1 vs BSS214NH6327XTSA1 Comparison
Detailed side-by-side comparison of BSP149H6327XTSA1 by Infineon and BSS214NH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSP149H6327XTSA1 | BSS214NH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.60 | $0.09 |
| Transistor Polarity | N-Channel | β |
| Mode of Operation | Depletion Mode (normally ON) | β |
| Drain-Source Voltage VDS | 200 V | β |
| Continuous Drain Current ID | 660 mA (Ta) | β |
| Power Dissipation PD | 1.8 W (Ta) | β |
| On-State Resistance RDS(on) | 1 ohm (typ) | β |
| Gate-Source Voltage VGS | [DATA_NEEDED: max VGS rating] | β |
| Package | PG-SOT223-4 (SOT-223-4) | SOT-23 (PG-SOT23), 3 pins |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +150 C (Tj) | β |
| Technology | SIPMOS | OptiMOS 2 (planar N-channel) |
| Channel Count | 1 | β |
| Pin Count | 4 (G, D, S, tab) | β |
| RoHS Status | Compliant | Compliant |
| Configuration | Single | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 20 V |
| Continuous Drain Current (ID) | β | 1.5 A (Ta) |
| Power Dissipation (PD) | β | 500 mW (Ta) |
| Drain-Source On-Resistance (RDS(on) max) | β | 250 mOhm at VGS = 4.5 V |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical and min/max values] |
| Gate-Source Voltage (VGS max) | β | Β±12 V (recommended) |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Qualification | β | AEC-Q101 (Automotive) |
| Lead Finish | β | Pb-free lead plating (matte tin) |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| ESD Protection | β | Yes (gate ESD diode) |