BSP315PH6327XTSA1 vs BSD235CH6327XTSA1 Comparison

Detailed side-by-side comparison of BSP315PH6327XTSA1 by Infineon and BSD235CH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ Active

Specification Comparison

Parameter BSP315PH6327XTSA1 BSD235CH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.31 $0.12
FET Type P-Channel
Technology OptiMOS (enhancement mode) OptiMOS™ low-voltage
Drain-Source Voltage (VDS) -60 V
Continuous Drain Current (ID) -1.17 A (Ta)
Power Dissipation (PD) 1.8 W (Ta)
Gate-Source Voltage (VGS) ±20 V (max)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max]
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10 V]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical]
Operating Temperature Range -55 C to +150 C (junction) -55 °C to +150 °C (junction)
Package PG-SOT223-4 (SOT-223-3 pinout with exposed tab)
Mounting Type Surface Mount Surface Mount
Avalanche Energy Rated Yes (per datasheet)
Lead-Free / RoHS Yes / Compliant
MSL Level 1 (per JEDEC J-STD-020) 1
Manufacturer Infineon Technologies
Part Family OptiMOS™
Configuration N+P complementary dual MOSFET
Drain-to-Source Voltage (VDS) 20 V
N-Channel Continuous Drain Current (ID) 950 mA
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity)
Total Power Dissipation (Ptot) 500 mW
Package Type PG-SOT363-6-1 (SOT-363, 6-pin)
Polarity N-channel + P-channel
Channel Mode Enhancement
RoHS Status Compliant (lead-free)
Pin Count 6

Datasheets & Resources

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