BSP315PH6327XTSA1 vs BSL308PEH6327XTSA1 Comparison

Detailed side-by-side comparison of BSP315PH6327XTSA1 by Infineon and BSL308PEH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 βœ“ Active
Infineon
BSL308PEH6327XTSA1 BSL308PEH6327XTSA1 - 30V 2A Dual P-Ch MOSFET | Infineon

BSL308PEH6327XTSA1 - 30V 2A Dual P-Ch MOSFET | Infineon

BSL308PEH6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSP315PH6327XTSA1 BSL308PEH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.31 $0.21
FET Type P-Channel 2x P-Channel (Dual)
Technology OptiMOS (enhancement mode) β€”
Drain-Source Voltage (VDS) -60 V -30 V
Continuous Drain Current (ID) -1.17 A (Ta) -2 A (Ta)
Power Dissipation (PD) 1.8 W (Ta) 500 mW (Ta)
Gate-Source Voltage (VGS) Β±20 V (max) β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] [DATA_NEEDED: VGS(th) typical value]
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10 V] [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] β€”
Operating Temperature Range -55 C to +150 C (junction) β€”
Package PG-SOT223-4 (SOT-223-3 pinout with exposed tab) PG-TSOP6-6 (TSOT-23-6)
Mounting Type Surface Mount Surface Mount
Avalanche Energy Rated Yes (per datasheet) β€”
Lead-Free / RoHS Yes / Compliant β€”
MSL Level 1 (per JEDEC J-STD-020) β€”
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS
Configuration β€” Dual, common source
Operating Temperature β€” -55 C to +150 C (TJ)
Automotive Qualification β€” AEC-Q101
Number of Pins β€” 6
Channel Mode β€” Enhancement
RoHS Status β€” Compliant

Datasheets & Resources

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