BSP315PH6327XTSA1 vs BSP135H6327XTSA1 Comparison

Detailed side-by-side comparison of BSP315PH6327XTSA1 by Infineon and BSP135H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 βœ“ Active
Infineon
BSP135H6327XTSA1 BSP135H6327XTSA1 - 600V N-Ch Depletion-Mode MOSFET | Infineon

BSP135H6327XTSA1 - 600V N-Ch Depletion-Mode MOSFET | Infineon

BSP135H6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSP315PH6327XTSA1 BSP135H6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.31 $0.43
FET Type P-Channel N-Channel, Depletion Mode
Technology OptiMOS (enhancement mode) SIPMOS (planar DMOS)
Drain-Source Voltage (VDS) -60 V 600 V
Continuous Drain Current (ID) -1.17 A (Ta) 120 mA
Power Dissipation (PD) 1.8 W (Ta) 1.8 W
Gate-Source Voltage (VGS) Β±20 V (max) [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] β€”
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10 V] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] β€”
Operating Temperature Range -55 C to +150 C (junction) -55C to +150C (junction, typical)
Package PG-SOT223-4 (SOT-223-3 pinout with exposed tab) PG-SOT223-4 (SOT-223-3 plus tab)
Mounting Type Surface Mount Surface Mount
Avalanche Energy Rated Yes (per datasheet) β€”
Lead-Free / RoHS Yes / Compliant β€”
MSL Level 1 (per JEDEC J-STD-020) 1
Manufacturer β€” Infineon Technologies
Part Number β€” BSP135H6327XTSA1
On-Resistance RDS(on) max β€” 45 ohm at VGS = 0 V
On-Resistance RDS(on) β€” 25 ohm (typical, per digchip)
Operating Mode β€” Normally ON (depletion)
RoHS Status β€” Compliant

Datasheets & Resources

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