BSP88H6327XTSA1 vs BSC0902NSIATMA1 Comparison
Detailed side-by-side comparison of BSP88H6327XTSA1 by Infineon and BSC0902NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0902NSIATMA1
BSC0902NSIATMA1 - 30V N-Ch OptiMOS MOSFET, PG-TDSON-8 | Infineon
BSC0902NSIATMA1 β ActiveSpecification Comparison
| Parameter | BSP88H6327XTSA1 | BSC0902NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.21 | $0.32 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 240 V | β |
| Continuous Drain Current (ID) | 350 mA at Ta=25 C | β |
| Power Dissipation (PD) | 1.8 W at Ta=25 C | β |
| Package | PG-SOT223-4 (SOT-223-3) | PG-TDSON-8-6 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| On-State Resistance (RDS(on)) | 6 ohm typical at VGS=10 V | β |
| Configuration | Single | β |
| Operating Temperature | -55 C to +150 C | β |
| Technology | SIPMOS (planar enhancement mode) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| Lead Plating | Pb-free | β |
| RoHS Compliance | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Drain Tab Connection | SOT-223 tab is drain | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 30V |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Gate-Source Voltage (VGS) Max | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TA=25C | β | 23 A |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) Max at VGS=10V | β | 2.8 mOhm |
| Gate Charge QG(0V..10V) | β | 24 nC |
| Output Charge QOSS | β | 17 nC |
| Power Dissipation (TA) | β | 2.5 W |
| Power Dissipation (TC) | β | 48 W |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Built-in Diode | β | Yes (single with built-in diode) |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |