BSP88H6327XTSA1 vs BSL308CH6327XTSA1 Comparison

Detailed side-by-side comparison of BSP88H6327XTSA1 by Infineon and BSL308CH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSP88H6327XTSA1 BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon

BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon

BSP88H6327XTSA1 βœ“ Active
Infineon
BSL308CH6327XTSA1 BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon

BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon

BSL308CH6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSP88H6327XTSA1 BSL308CH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.21 $0.21
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 240 V β€”
Continuous Drain Current (ID) 350 mA at Ta=25 C β€”
Power Dissipation (PD) 1.8 W at Ta=25 C β€”
Package PG-SOT223-4 (SOT-223-3) PG-TSOP6-6 (TSOP-6, 6 pins)
Mounting Type Surface Mount Surface Mount
On-State Resistance (RDS(on)) 6 ohm typical at VGS=10 V β€”
Configuration Single Complementary dual MOSFET (1 N-channel + 1 P-channel)
Operating Temperature -55 C to +150 C β€”
Technology SIPMOS (planar enhancement mode) β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] [DATA_NEEDED: VGS(th) typical value]
Automotive Qualification AEC-Q101 qualified β€”
Lead Plating Pb-free β€”
RoHS Compliance Compliant β€”
MSL Level [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] 5 nC @ 10 V
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] 18 pF
Drain Tab Connection SOT-223 tab is drain β€”
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOSβ„’ low-voltage power MOSFETs
Drain-to-Source Voltage (VDS) β€” 30 V
Continuous Drain Current - N-channel (ID, N-ch) β€” 2.3 A
Continuous Drain Current - P-channel (ID, P-ch) β€” 2 A
Total Power Dissipation (Ptot) β€” 500 mW
On-State Resistance N-channel (RDS(on) @ VGS=10V) β€” [DATA_NEEDED: RDS(on) N-ch]
On-State Resistance P-channel (RDS(on) @ VGS=10V) β€” [DATA_NEEDED: RDS(on) P-ch]
Operating Temperature Range β€” -55 Β°C to +150 Β°C
Automotive Qualified β€” Yes (per Infineon part-number suffix, automotive grade)
RoHS Status β€” Compliant
Lead-Free β€” Yes
Halogen-Free β€” Yes (per Infineon product family convention)

Datasheets & Resources

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