BSP88H6327XTSA1 vs BSP92PH6327XTSA1 Comparison

Detailed side-by-side comparison of BSP88H6327XTSA1 by Infineon and BSP92PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSP88H6327XTSA1 BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon

BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon

BSP88H6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSP88H6327XTSA1 BSP92PH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.21 $0.31
Transistor Type N-Channel MOSFET P-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) 240 V -250 V
Continuous Drain Current (ID) 350 mA at Ta=25 C -260 mA (Ta)
Power Dissipation (PD) 1.8 W at Ta=25 C 1.8 W (Ta)
Package PG-SOT223-4 (SOT-223-3) PG-SOT223-4 (SOT-223-4)
Mounting Type Surface Mount Surface Mount
On-State Resistance (RDS(on)) 6 ohm typical at VGS=10 V [DATA_NEEDED: RDS(on) at VGS=-10V]
Configuration Single β€”
Operating Temperature -55 C to +150 C -55C to +150C (Tj)
Technology SIPMOS (planar enhancement mode) β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] [DATA_NEEDED: VGS(th) typical and min/max]
Automotive Qualification AEC-Q101 qualified β€”
Lead Plating Pb-free β€”
RoHS Compliance Compliant β€”
MSL Level [DATA_NEEDED: MSL level] 1 (unlimited)
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] β€”
Drain Tab Connection SOT-223 tab is drain β€”
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS P-Channel Small-Signal Power MOSFET
Channel Polarity β€” P-Channel
Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge]
Lead-Free / RoHS β€” Yes / Compliant
Pin Count β€” 4 (Gate, Drain, Drain, Source)

Datasheets & Resources

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