BSP88H6327XTSA1 vs BSS87H6327FTSA1 Comparison
Detailed side-by-side comparison of BSP88H6327XTSA1 by Infineon and BSS87H6327FTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSP88H6327XTSA1 | BSS87H6327FTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.21 | $0.18 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 240 V | 240 V |
| Continuous Drain Current (ID) | 350 mA at Ta=25 C | 260 mA (Ta) |
| Power Dissipation (PD) | 1.8 W at Ta=25 C | 1 W (Ta) |
| Package | PG-SOT223-4 (SOT-223-3) | PG-SOT89-4-2 (SOT-89) |
| Mounting Type | Surface Mount | Surface Mount |
| On-State Resistance (RDS(on)) | 6 ohm typical at VGS=10 V | β |
| Configuration | Single | β |
| Operating Temperature | -55 C to +150 C | β |
| Technology | SIPMOS (planar enhancement mode) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Lead Plating | Pb-free | β |
| RoHS Compliance | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Drain Tab Connection | SOT-223 tab is drain | β |
| FET Type | β | N-Channel enhancement-mode |
| Drain-Source On-Resistance (RDS(on)) | β | 6 ohm max at VGS=10V |
| Gate-Source Voltage (VGS) | β | +/-20 V |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Pin Count | β | 3 (Gate / Drain / Source) |
| RoHS Status | β | Compliant |
| Lead-Free / Pb-Free | β | Yes (Pb-free plating) |
| Process Technology | β | Vertical DMOS |