BSP89H6327XTSA1 vs BSP88H6327XTSA1 Comparison

Detailed side-by-side comparison of BSP89H6327XTSA1 by Infineon and BSP88H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSP89H6327XTSA1 BSP89H6327XTSA1 - 240V N-Ch SIPMOS MOSFET, 350mA | Infineon

BSP89H6327XTSA1 - 240V N-Ch SIPMOS MOSFET, 350mA | Infineon

BSP89H6327XTSA1 βœ“ Active
Infineon
BSP88H6327XTSA1 BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon

BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon

BSP88H6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSP89H6327XTSA1 BSP88H6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.39 $0.21
Transistor Type N-Channel MOSFET, enhancement mode N-Channel MOSFET
Technology SIPMOS (planar power MOS) SIPMOS (planar enhancement mode)
Drain-Source Breakdown Voltage (V(BR)DSS) 240 V (VGS=0, ID=250 Β΅A) β€”
Continuous Drain Current (ID) at Ta=25Β°C 0.35 A β€”
Total Power Dissipation (Ptot) at Ta=25Β°C 1.8 W (on FR4 PCB, 6 cmΒ² cooling area) β€”
On-State Resistance (RDS(on)) max 6 Ξ© (typical) β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) min/typ/max]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Operating Temperature Range -55 Β°C to +150 Β°C (Tj) β€”
Thermal Resistance Junction-Ambient (RthJA) 70 K/W (6 cmΒ² PCB) β€”
Thermal Resistance Junction-Solder Point (RthJS) 25 K/W β€”
Package PG-SOT223-4 (SOT-223, 4-pin with tab) PG-SOT223-4 (SOT-223-3)
Mounting Type Surface Mount Surface Mount
Logic-Level Gate Drive Yes (logic-level compatible) β€”
dv/dt Rated Yes β€”
ESD Protection Internal gate-source Zener β€”
Automotive Qualification AEC-Q101 (per ordering code H6327) AEC-Q101 qualified
RoHS Status Compliant β€”
Drain-Source Voltage (VDS) β€” 240 V
Continuous Drain Current (ID) β€” 350 mA at Ta=25 C
Power Dissipation (PD) β€” 1.8 W at Ta=25 C
On-State Resistance (RDS(on)) β€” 6 ohm typical at VGS=10 V
Configuration β€” Single
Operating Temperature β€” -55 C to +150 C
Lead Plating β€” Pb-free
RoHS Compliance β€” Compliant
MSL Level β€” [DATA_NEEDED: MSL level]
Total Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
Drain Tab Connection β€” SOT-223 tab is drain

Datasheets & Resources

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