BSP92PH6327XTSA1 vs BSL308CH6327XTSA1 Comparison
Detailed side-by-side comparison of BSP92PH6327XTSA1 by Infineon and BSL308CH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSP92PH6327XTSA1 - P-Channel 250V 260mA MOSFET SOT-223 | Infineon
BSP92PH6327XTSA1 β Active
Specification Comparison
| Parameter | BSP92PH6327XTSA1 | BSL308CH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.31 | $0.21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS P-Channel Small-Signal Power MOSFET | OptiMOSβ’ low-voltage power MOSFETs |
| Transistor Type | P-Channel Enhancement Mode MOSFET | β |
| Drain-Source Voltage (VDS) | -250 V | β |
| Continuous Drain Current (ID) | -260 mA (Ta) | β |
| Power Dissipation (PD) | 1.8 W (Ta) | β |
| Package | PG-SOT223-4 (SOT-223-4) | PG-TSOP6-6 (TSOP-6, 6 pins) |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Polarity | P-Channel | β |
| Operating Temperature | -55C to +150C (Tj) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | β |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Lead-Free / RoHS | Yes / Compliant | β |
| MSL Level | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| Pin Count | 4 (Gate, Drain, Drain, Source) | β |
| Configuration | β | Complementary dual MOSFET (1 N-channel + 1 P-channel) |
| Drain-to-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current - N-channel (ID, N-ch) | β | 2.3 A |
| Continuous Drain Current - P-channel (ID, P-ch) | β | 2 A |
| Total Power Dissipation (Ptot) | β | 500 mW |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | β | [DATA_NEEDED: RDS(on) N-ch] |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | β | [DATA_NEEDED: RDS(on) P-ch] |
| Total Gate Charge (Qg) | β | 5 nC @ 10 V |
| Input Capacitance (Ciss) | β | 18 pF |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C |
| Automotive Qualified | β | Yes (per Infineon part-number suffix, automotive grade) |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes (per Infineon product family convention) |