BSS123IXTSA1 vs 2N7002L Comparison
Detailed side-by-side comparison of BSS123IXTSA1 by Infineon and 2N7002L by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSS123IXTSA1 | 2N7002L |
|---|---|---|
| Brand | Infineon | onsemi |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.11 | $0.03 |
| Transistor Type | N-Channel MOSFET | N-Channel Enhancement Mode MOSFET |
| Technology | OptiMOS Small-Signal | High cell density trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 190 mA | β |
| Power Dissipation (PD) at TA=25C | 500 mW | β |
| RDS(on) (typical, VGS=10 V) | 2.4 ohm | β |
| RDS(on) (max per family datasheet) | 6 ohm | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | 1 V to 2.5 V |
| Package | PG-SOT-23-3 (SOT-23-3) | SOT-23 (SOT-23-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (per family datasheet) | β |
| Qualification | Industrial | β |
| Configuration | Single N-Channel | Single FET |
| Lead-Free / RoHS | Yes (per distributor listing) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Gate Drive Logic Level | Logic-level compatible | β |
| Continuous Drain Current (ID) | β | 115 mA (Ta) |
| On-State Resistance (RDS(on)) | β | 7.5 ohm max at VGS = 5V |
| Gate-Source Voltage (VGS) | β | +/-20 V |
| Power Dissipation (PD) | β | 200 mW (Ta), 225 mW max |
| Switching Performance | β | Fast switching, rugged and reliable |
| Gate Drive | β | 5V logic-level enhancement mode |
| Typical Applications | β | Low-side switching, servo motor control, gate driving, logic-level shifting |
| Manufacturer | β | onsemi |
| RoHS Status | β | [DATA_NEEDED: RoHS status] |