BSS127H6327XTSA2 vs BSD235CH6327XTSA1 Comparison

Detailed side-by-side comparison of BSS127H6327XTSA2 by Infineon and BSD235CH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSS127H6327XTSA2 BSD235CH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.03 $0.12
FET Type N-Channel SIPMOS, enhancement mode
Drain-Source Voltage (VDS) 600 V
Continuous Drain Current (ID) 21 mA (Ta)
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed ID limit]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) 4.5 V (logic level, rated)
On-State Resistance (RDS(on)) max 500 ohm at ID = 21 mA
Total Power Dissipation (Ptot) 500 mW (Ta) 500 mW
Operating Junction Temperature -55 C to +150 C
Package SOT-23-3 (PG-SOT23)
Mounting Type Surface Mount Surface Mount
Pin Count 3 6
dv/dt Rated Yes
Automotive Qualification AEC-Q101
RoHS Status Compliant (lead-free) Compliant (lead-free)
Halogen-Free Yes, per IEC 61249-2-21
MSL Level [DATA_NEEDED: MSL rating] 1
Manufacturer Infineon Technologies
Part Family OptiMOS™
Configuration N+P complementary dual MOSFET
Drain-to-Source Voltage (VDS) 20 V
N-Channel Continuous Drain Current (ID) 950 mA
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity)
Package Type PG-SOT363-6-1 (SOT-363, 6-pin)
Technology OptiMOS™ low-voltage
Operating Temperature Range -55 °C to +150 °C (junction)
Polarity N-channel + P-channel
Channel Mode Enhancement

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