BSS138LT1G vs 2N7002L Comparison

Detailed side-by-side comparison of BSS138LT1G by onsemi and 2N7002L by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSS138LT1G 2N7002L
Brand onsemi onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.08 $0.03
Transistor Type N-Channel MOSFET N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) 50 V 60 V
Continuous Drain Current (ID) 200 mA (Ta) 115 mA (Ta)
Power Dissipation (PD) 225 mW (Ta) 200 mW (Ta), 225 mW max
On-Resistance Max (RDS(on)) 3.5 ohm β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] 1 V to 2.5 V
Gate-Source Voltage Max (VGS) [DATA_NEEDED: maximum gate-source voltage] β€”
Configuration Single FET Single FET
Channel Mode Enhancement Mode β€”
Package SOT-23-3 (TO-236) SOT-23 (SOT-23-3)
Mounting Type Surface Mount Surface Mount
Operating Temperature [DATA_NEEDED: operating temperature range] β€”
RoHS Status Compliant (RoHS Compliant and Pb-free per Easybom) [DATA_NEEDED: RoHS status]
Product Family BSS138LT Series Small Signal MOSFET β€”
Typical Applications Computers, printers, cordless phones, DC-DC converters Low-side switching, servo motor control, gate driving, logic-level shifting
On-State Resistance (RDS(on)) β€” 7.5 ohm max at VGS = 5V
Gate-Source Voltage (VGS) β€” +/-20 V
Technology β€” High cell density trench MOSFET
Switching Performance β€” Fast switching, rugged and reliable
Gate Drive β€” 5V logic-level enhancement mode
Manufacturer β€” onsemi

Datasheets & Resources

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