BSS138LT1G vs BSS138L Comparison

Detailed side-by-side comparison of BSS138LT1G by onsemi and BSS138L by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSS138LT1G BSS138L
Brand onsemi onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.08 $0.02
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 50 V β€”
Continuous Drain Current (ID) 200 mA (Ta) β€”
Power Dissipation (PD) 225 mW (Ta) β€”
On-Resistance Max (RDS(on)) 3.5 ohm β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] β€”
Gate-Source Voltage Max (VGS) [DATA_NEEDED: maximum gate-source voltage] β€”
Configuration Single FET Single FET
Channel Mode Enhancement Mode β€”
Package SOT-23-3 (TO-236) SOT-23-3
Mounting Type Surface Mount Surface Mount
Operating Temperature [DATA_NEEDED: operating temperature range] β€”
RoHS Status Compliant (RoHS Compliant and Pb-free per Easybom) [DATA_NEEDED: RoHS status]
Product Family BSS138LT Series Small Signal MOSFET β€”
Typical Applications Computers, printers, cordless phones, DC-DC converters β€”
Polarity β€” N-Channel
Operating Mode β€” Enhancement Mode
VDS Drain-Source Voltage β€” 50 V
Continuous Drain Current (Ta) β€” 200 mA
Power Dissipation (Ta) β€” 350 mW
RDS(on) Max β€” 3.5 ohm
Technology β€” Trench MOSFET, high cell density
Gate Type β€” Logic Level
Switching Performance β€” Fast switching, rugged, reliable
Input Capacitance β€” [DATA_NEEDED: Ciss]
VGS Gate-Source Voltage β€” [DATA_NEEDED: VGS max rating]
Operating Temperature Range β€” [DATA_NEEDED: operating temperature range]
Packaging β€” 3000 units per reel (tape and reel)

Datasheets & Resources

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