BSS138LT1G vs BSS138LT1G-VB Comparison

Detailed side-by-side comparison of BSS138LT1G by onsemi and BSS138LT1G-VB by VBsemi Elec. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

VBsemi Elec
BSS138LT1G-VB BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB βœ“ Active

Specification Comparison

Parameter BSS138LT1G BSS138LT1G-VB
Brand onsemi VBsemi Elec
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.08 $0.02
Transistor Type N-Channel MOSFET N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) 50 V β€”
Continuous Drain Current (ID) 200 mA (Ta) β€”
Power Dissipation (PD) 225 mW (Ta) β€”
On-Resistance Max (RDS(on)) 3.5 ohm β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] β€”
Gate-Source Voltage Max (VGS) [DATA_NEEDED: maximum gate-source voltage] β€”
Configuration Single FET Single FET
Channel Mode Enhancement Mode β€”
Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Mounting Type Surface Mount Surface Mount
Operating Temperature [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
RoHS Status Compliant (RoHS Compliant and Pb-free per Easybom) Compliant
Product Family BSS138LT Series Small Signal MOSFET β€”
Typical Applications Computers, printers, cordless phones, DC-DC converters β€”
Drain-Source Voltage (Vdss) β€” 50 V
Continuous Drain Current (Id) β€” 200 mA (Ta)
Power Dissipation (Pd) β€” 225 mW (Ta)
Gate Threshold Voltage (Vgs th) β€” [DATA_NEEDED: gate threshold voltage]
RDS(on) Max β€” [DATA_NEEDED: RDS(on)]
Drive Voltage β€” [DATA_NEEDED: drive voltage]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg]
Manufacturer β€” VBsemi Elec
Equivalent To β€” onsemi BSS138LT1G

Datasheets & Resources

Browse All Products Create BOM Request Quote