BSS138LT1G vs FDV301N Comparison

Detailed side-by-side comparison of BSS138LT1G by onsemi and FDV301N by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSS138LT1G FDV301N
Brand onsemi onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.08 $0.08
Transistor Type N-Channel MOSFET N-Channel Enhancement Mode MOSFET (Digital FET)
Drain-Source Voltage (VDS) 50 V β€”
Continuous Drain Current (ID) 200 mA (Ta) β€”
Power Dissipation (PD) 225 mW (Ta) β€”
On-Resistance Max (RDS(on)) 3.5 ohm β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] β€”
Gate-Source Voltage Max (VGS) [DATA_NEEDED: maximum gate-source voltage] β€”
Configuration Single FET β€”
Channel Mode Enhancement Mode β€”
Package SOT-23-3 (TO-236) SOT-23-3
Mounting Type Surface Mount Surface Mount
Operating Temperature [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
RoHS Status Compliant (RoHS Compliant and Pb-free per Easybom) [DATA_NEEDED: RoHS compliance status]
Product Family BSS138LT Series Small Signal MOSFET β€”
Typical Applications Computers, printers, cordless phones, DC-DC converters β€”
Drain-Source Voltage (Vdss) β€” 25 V
Continuous Drain Current (Id) β€” 220 mA (Ta)
Peak Drain Current β€” 0.5 A
RDS(on) at VGS = 2.7 V β€” 5 ohm (typical)
RDS(on) typical β€” 4 ohm
Power Dissipation (Pd) β€” 350 mW (Ta)
Technology β€” High cell density DMOS
Gate Drive Type β€” Logic level (no bias resistors required)
Gate-Source Voltage (Vgs) Max β€” [DATA_NEEDED: maximum gate-source voltage]
Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge]
Input Capacitance (Ciss) β€” [DATA_NEEDED: input capacitance]
Thermal Resistance (RthJA) β€” [DATA_NEEDED: thermal resistance junction to ambient]
MSL Level β€” [DATA_NEEDED: moisture sensitivity level]

Datasheets & Resources

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