BSS169H6327XTSA1 vs 2N7002L Comparison
Detailed side-by-side comparison of BSS169H6327XTSA1 by Infineon and 2N7002L by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSS169H6327XTSA1 | 2N7002L |
|---|---|---|
| Brand | Infineon | onsemi |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.15 | $0.03 |
| FET Type | N-Channel Depletion Mode | β |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) | 170 mA (Ta) | 115 mA (Ta) |
| Power Dissipation (PD) | 360 mW (Ta) | 200 mW (Ta), 225 mW max |
| RDS(on) Maximum | 6 Ohm at VGS=0 V | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute maximum rating] | β |
| Gate Threshold Voltage (VGS(th)) | Pinch-off approx. -3.5 V (typical) | 1 V to 2.5 V |
| Operating Temperature Range | [DATA_NEEDED: junction/ambient operating temperature range] | β |
| Package | PG-SOT23 (SOT-23-3) | SOT-23 (SOT-23-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | β |
| Technology | Depletion-mode vertical DMOS | High cell density trench MOSFET |
| Drain Current at 25C | 170 mA continuous | β |
| Typical RDS(on) | [DATA_NEEDED: typical RDS(on) value] | β |
| Transistor Type | β | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | β | 60 V |
| On-State Resistance (RDS(on)) | β | 7.5 ohm max at VGS = 5V |
| Gate-Source Voltage (VGS) | β | +/-20 V |
| Configuration | β | Single FET |
| Switching Performance | β | Fast switching, rugged and reliable |
| Gate Drive | β | 5V logic-level enhancement mode |
| Typical Applications | β | Low-side switching, servo motor control, gate driving, logic-level shifting |
| Manufacturer | β | onsemi |