BSS169H6327XTSA1 vs BSP316PH6327XTSA1 Comparison
Detailed side-by-side comparison of BSS169H6327XTSA1 by Infineon and BSP316PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223
BSP316PH6327XTSA1 β ActiveSpecification Comparison
| Parameter | BSS169H6327XTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.15 | $0.21 |
| FET Type | N-Channel Depletion Mode | P-Channel |
| Drain-to-Source Voltage (VDS) | 100 V | -100 V |
| Continuous Drain Current (ID) | 170 mA (Ta) | β |
| Power Dissipation (PD) | 360 mW (Ta) | β |
| RDS(on) Maximum | 6 Ohm at VGS=0 V | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute maximum rating] | β |
| Gate Threshold Voltage (VGS(th)) | Pinch-off approx. -3.5 V (typical) | [DATA_NEEDED: VGS(th) typical] |
| Operating Temperature Range | [DATA_NEEDED: junction/ambient operating temperature range] | -55 C to +150 C (junction) |
| Package | PG-SOT23 (SOT-23-3) | PG-SOT223-4 (TO-261-4) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Technology | Depletion-mode vertical DMOS | SIPMOS (P-channel MOSFET) |
| Drain Current at 25C | 170 mA continuous | β |
| Typical RDS(on) | [DATA_NEEDED: typical RDS(on) value] | β |
| Continuous Drain Current (ID) at TA=25C | β | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | β | 1.8 W |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Number of Pins | β | 3 + thermal tab |
| Channel Mode | β | Enhancement |
| Packaging | β | Tape & Reel (H6327 suffix) |