BSS214NH6327XTSA1 vs BSS308PEH6327XTSA1 Comparison
Detailed side-by-side comparison of BSS214NH6327XTSA1 by Infineon and BSS308PEH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 β ActiveSpecification Comparison
| Parameter | BSS214NH6327XTSA1 | BSS308PEH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.09 | $0.11 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 20 V | -30 V |
| Continuous Drain Current (ID) | 1.5 A (Ta) | -2 A (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) | 500 mW (Ta) |
| Drain-Source On-Resistance (RDS(on) max) | 250 mOhm at VGS = 4.5 V | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | β |
| Gate-Source Voltage (VGS max) | Β±12 V (recommended) | β |
| Technology | OptiMOS 2 (planar N-channel) | β |
| Package | SOT-23 (PG-SOT23), 3 pins | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | -55 Β°C to +150 Β°C |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 Automotive |
| Lead Finish | Pb-free lead plating (matte tin) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| ESD Protection | Yes (gate ESD diode) | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOS P (small signal / small power MOSFET) |
| Transistor Type | β | P-Channel Enhancement Mode MOSFET |
| RDS(on) Max | β | 80 mΞ© at VGS = -10 V |
| Gate-Source Voltage (VGS) Max | β | +/-20 V |
| Package / Case | β | PG-SOT23 (SOT-23-3) |
| Number of Pins | β | 3 |
| Packaging | β | Tape & Reel (T/R) |
| Standard Reel Quantity | β | 3000 pcs |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |