BSS214NH6327XTSA1 vs BSS314PEH6327XTSA1 Comparison
Detailed side-by-side comparison of BSS214NH6327XTSA1 by Infineon and BSS314PEH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSS314PEH6327XTSA1 - -30V P-Ch 1.5A OptiMOS MOSFET | Infineon
BSS314PEH6327XTSA1 β ActiveSpecification Comparison
| Parameter | BSS214NH6327XTSA1 | BSS314PEH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.09 | $0.15 |
| FET Type | N-Channel | P-Channel |
| Drain-Source Voltage (VDS) | 20 V | β |
| Continuous Drain Current (ID) | 1.5 A (Ta) | β |
| Power Dissipation (PD) | 500 mW (Ta) | β |
| Drain-Source On-Resistance (RDS(on) max) | 250 mOhm at VGS = 4.5 V | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | β |
| Gate-Source Voltage (VGS max) | Β±12 V (recommended) | β |
| Technology | OptiMOS 2 (planar N-channel) | MOSFET (Metal Oxide) |
| Package | SOT-23 (PG-SOT23), 3 pins | PG-SOT23-3 (SOT-23-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | -55 C to +150 C (TJ) |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (Automotive) |
| Lead Finish | Pb-free lead plating (matte tin) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| ESD Protection | Yes (gate ESD diode) | β |
| Drain-to-Source Voltage (VDS) | β | -30 V |
| Continuous Drain Current (ID) @ TA=25C | β | -1.5 A |
| Power Dissipation (PD) @ TA=25C | β | 500 mW |
| RDS(on) max @ VGS=-10V | β | 140 mOhm |
| RDS(on) max @ VGS=-4.5V | β | [DATA_NEEDED: RDS(on) at -4.5V VGS] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| Gate Drive Voltage (max Rds(on)) | β | -4.5 V, -10 V |
| Pin Configuration | β | G-D-S (Gate, Drain, Source) |