BSS214NH6327XTSA1 vs BSS806NH6327XTSA1 Comparison
Detailed side-by-side comparison of BSS214NH6327XTSA1 by Infineon and BSS806NH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSS806NH6327XTSA1 - 20V N-Ch OptiMOS 2 MOSFET, SOT-23 | Infineon
BSS806NH6327XTSA1 β ActiveSpecification Comparison
| Parameter | BSS214NH6327XTSA1 | BSS806NH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.09 | $0.19 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 20 V | 20 V |
| Continuous Drain Current (ID) | 1.5 A (Ta) | β |
| Power Dissipation (PD) | 500 mW (Ta) | β |
| Drain-Source On-Resistance (RDS(on) max) | 250 mOhm at VGS = 4.5 V | 57 mΞ© |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | 1.8 V rated (logic level) |
| Gate-Source Voltage (VGS max) | Β±12 V (recommended) | β |
| Technology | OptiMOS 2 (planar N-channel) | OptiMOS 2 (trench MOSFET) |
| Package | SOT-23 (PG-SOT23), 3 pins | PG-SOT23-3 (SOT-23-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | -55 C to +150 C (junction) |
| Qualification | AEC-Q101 (Automotive) | β |
| Lead Finish | Pb-free lead plating (matte tin) | β |
| RoHS Status | Compliant | Compliant (Pb-free plating) |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| ESD Protection | Yes (gate ESD diode) | β |
| Continuous Drain Current (ID, Ta) | β | 2.3 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate Drive (recommended VGS) | β | 1.8 V to 10 V |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: typical Qg] |
| Power Dissipation (PD, Ta) | β | 500 mW |
| Automotive Qualification | β | AEC-Q101 qualified |