BSS308PEH6327XTSA1 vs 2N7002H6327XTSA2 Comparison

Detailed side-by-side comparison of BSS308PEH6327XTSA1 by Infineon and 2N7002H6327XTSA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
2N7002H6327XTSA2 2N7002H6327XTSA2 - 60V N-Ch OptiMOS MOSFET SOT-23 | Infineon

2N7002H6327XTSA2 - 60V N-Ch OptiMOS MOSFET SOT-23 | Infineon

2N7002H6327XTSA2 βœ“ Active

Specification Comparison

Parameter BSS308PEH6327XTSA1 2N7002H6327XTSA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.11 $0.08
Manufacturer Infineon Technologies β€”
Part Family OptiMOS P (small signal / small power MOSFET) β€”
Transistor Type P-Channel Enhancement Mode MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) -30 V 60 V
Continuous Drain Current (ID) -2 A (Ta) 300 mA (Ta)
RDS(on) Max 80 mΞ© at VGS = -10 V β€”
Gate-Source Voltage (VGS) Max +/-20 V β€”
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
Operating Temperature Range -55 Β°C to +150 Β°C -55C to +150C (Tj)
Package / Case PG-SOT23 (SOT-23-3) β€”
Mounting Type Surface Mount Surface Mount
Number of Pins 3 β€”
Qualification AEC-Q101 Automotive Industrial / Commercial Grade
RoHS Status Compliant Compliant
Packaging Tape & Reel (T/R) β€”
Standard Reel Quantity 3000 pcs β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) typical value]
Technology β€” OptiMOS (Planar)
On-State Resistance (RDS(on)) β€” 3 ohm max @ VGS = 10 V
Gate Charge (Qg) β€” [DATA_NEEDED: Qg total]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
Package β€” PG-SOT23 (SOT-23-3)
Channel Mode β€” Enhancement
MSL Level β€” 1 (per JEDEC J-STD-020)
Lead-Free β€” Yes

Datasheets & Resources

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