BSS308PEH6327XTSA1 vs BSS806NEH6327XTSA1 Comparison

Detailed side-by-side comparison of BSS308PEH6327XTSA1 by Infineon and BSS806NEH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSS806NEH6327XTSA1 BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon

BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon

BSS806NEH6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSS308PEH6327XTSA1 BSS806NEH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.11 $0.14
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS P (small signal / small power MOSFET) β€”
Transistor Type P-Channel Enhancement Mode MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) -30 V 20 V (maximum)
Continuous Drain Current (ID) -2 A (Ta) 2.3 A (Ta)
RDS(on) Max 80 mΞ© at VGS = -10 V β€”
Gate-Source Voltage (VGS) Max +/-20 V β€”
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
Operating Temperature Range -55 Β°C to +150 Β°C [DATA_NEEDED: operating temperature range]
Package / Case PG-SOT23 (SOT-23-3) β€”
Mounting Type Surface Mount Surface Mount
Number of Pins 3 β€”
Qualification AEC-Q101 Automotive β€”
RoHS Status Compliant β€”
Packaging Tape & Reel (T/R) β€”
Standard Reel Quantity 3000 pcs β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] β€”
Part Number β€” BSS806NEH6327XTSA1
Mode of Operation β€” Enhancement-mode
On-Resistance RDS(on) β€” 57 mOhm (maximum)
Package β€” PG-SOT23 (SOT-23-3)
Pin Count β€” 3 (Gate, Drain, Source)
Lead Plating β€” Pb-free
RoHS Compliance β€” Yes (compliant)
AEC-Q101 Qualification β€” Qualified (automotive grade)

Datasheets & Resources

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