BSS308PEH6327XTSA1 vs IRLML6346TRPBF Comparison

Detailed side-by-side comparison of BSS308PEH6327XTSA1 by Infineon and IRLML6346TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLML6346TRPBF IRLML6346TRPBF - 30V 3.4A N-Ch HEXFET MOSFET | Infineon

IRLML6346TRPBF - 30V 3.4A N-Ch HEXFET MOSFET | Infineon

IRLML6346TRPBF βœ“ Active

Specification Comparison

Parameter BSS308PEH6327XTSA1 IRLML6346TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.11 $0.18
Manufacturer Infineon Technologies β€”
Part Family OptiMOS P (small signal / small power MOSFET) β€”
Transistor Type P-Channel Enhancement Mode MOSFET β€”
Drain-Source Voltage (VDS) -30 V 30 V
Continuous Drain Current (ID) -2 A (Ta) 3.4 A (TA=25C)
RDS(on) Max 80 mΞ© at VGS = -10 V β€”
Gate-Source Voltage (VGS) Max +/-20 V β€”
Power Dissipation (PD) 500 mW (Ta) β€”
Operating Temperature Range -55 Β°C to +150 Β°C β€”
Package / Case PG-SOT23 (SOT-23-3) β€”
Mounting Type Surface Mount Surface Mount
Number of Pins 3 β€”
Qualification AEC-Q101 Automotive β€”
RoHS Status Compliant Compliant
Packaging Tape & Reel (T/R) β€”
Standard Reel Quantity 3000 pcs β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) value]
Polarity β€” N-Channel
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=2.5V β€” 63 mOhm
RDS(on) max @ VGS=4.5V β€” [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Drive Capability β€” 2.5V logic-level
Maximum Power Dissipation (PD) β€” 1.3 W (TA=25C, 1in2 FR4)
Operating Junction Temperature β€” -55C to +150C
Package β€” Micro3 / SOT-23
Technology β€” HEXFET Power MOSFET
MSL Level β€” 1
Lead-Free Finish β€” Yes (PBF suffix)

Datasheets & Resources

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