BSS314PEH6327XTSA1 vs BSS308PEH6327XTSA1 Comparison

Detailed side-by-side comparison of BSS314PEH6327XTSA1 by Infineon and BSS308PEH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSS314PEH6327XTSA1 BSS314PEH6327XTSA1 - -30V P-Ch 1.5A OptiMOS MOSFET | Infineon

BSS314PEH6327XTSA1 - -30V P-Ch 1.5A OptiMOS MOSFET | Infineon

BSS314PEH6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSS314PEH6327XTSA1 BSS308PEH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.15 $0.11
FET Type P-Channel β€”
Technology MOSFET (Metal Oxide) β€”
Drain-to-Source Voltage (VDS) -30 V β€”
Continuous Drain Current (ID) @ TA=25C -1.5 A β€”
Power Dissipation (PD) @ TA=25C 500 mW β€”
RDS(on) max @ VGS=-10V 140 mOhm β€”
RDS(on) max @ VGS=-4.5V [DATA_NEEDED: RDS(on) at -4.5V VGS] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: gate threshold voltage]
Gate Drive Voltage (max Rds(on)) -4.5 V, -10 V β€”
Package PG-SOT23-3 (SOT-23-3) β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +150 C (TJ) -55 Β°C to +150 Β°C
Qualification AEC-Q101 (Automotive) AEC-Q101 Automotive
Pin Configuration G-D-S (Gate, Drain, Source) β€”
MSL Level MSL1 (per JEDEC J-STD-020) β€”
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Part Family β€” OptiMOS P (small signal / small power MOSFET)
Transistor Type β€” P-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) β€” -30 V
Continuous Drain Current (ID) β€” -2 A (Ta)
RDS(on) Max β€” 80 mΞ© at VGS = -10 V
Gate-Source Voltage (VGS) Max β€” +/-20 V
Power Dissipation (PD) β€” 500 mW (Ta)
Package / Case β€” PG-SOT23 (SOT-23-3)
Number of Pins β€” 3
Packaging β€” Tape & Reel (T/R)
Standard Reel Quantity β€” 3000 pcs

Datasheets & Resources

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