BSS316NH6327XTSA1 vs BSP149H6327XTSA1 Comparison

Detailed side-by-side comparison of BSS316NH6327XTSA1 by Infineon and BSP149H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSS316NH6327XTSA1 BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon

BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon

BSS316NH6327XTSA1 βœ“ Active
Infineon
BSP149H6327XTSA1 BSP149H6327XTSA1 - 200V N-Ch Depletion-Mode MOSFET | Infineon

BSP149H6327XTSA1 - 200V N-Ch Depletion-Mode MOSFET | Infineon

BSP149H6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSS316NH6327XTSA1 BSP149H6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.13 $0.60
FET Type N-Channel, Enhancement Mode β€”
Technology OptiMOS 2 (Trench) SIPMOS
Drain-Source Voltage (VDS) 30 V β€”
Continuous Drain Current (ID) at TA=25C 1.4 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Drain-Source On-Resistance RDS(on) max 160 mOhm at VGS=10V, ID=1.4A β€”
Gate-Source Threshold Voltage VGS(th) typ 2 V at ID=3.7 uA β€”
Total Gate Charge (Qg) 600 pC at VGS=5 V β€”
Input Capacitance (Ciss) 94 pF at VDS=15 V β€”
Output Capacitance (Coss) [DATA_NEEDED: output capacitance] β€”
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: reverse transfer capacitance] β€”
Maximum Power Dissipation (PD) at TA=25C 500 mW β€”
Operating Junction Temperature Range -55 C to +150 C β€”
Package PG-SOT23 (SOT-23-3) PG-SOT223-4 (SOT-223-4)
Mounting Type Surface Mount Surface Mount
Lead Plating Pb-free (Matte Tin) β€”
MSL Level MSL1 (per JEDEC J-STD-020) β€”
RoHS Status Compliant Compliant
Automotive Qualification AEC-Q101 qualified β€”
Transistor Polarity β€” N-Channel
Mode of Operation β€” Depletion Mode (normally ON)
Drain-Source Voltage VDS β€” 200 V
Continuous Drain Current ID β€” 660 mA (Ta)
Power Dissipation PD β€” 1.8 W (Ta)
On-State Resistance RDS(on) β€” 1 ohm (typ)
Gate-Source Voltage VGS β€” [DATA_NEEDED: max VGS rating]
Operating Temperature β€” -55 C to +150 C (Tj)
Channel Count β€” 1
Pin Count β€” 4 (G, D, S, tab)
Configuration β€” Single

Datasheets & Resources

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