BSS316NH6327XTSA1 vs BSS214NH6327XTSA1 Comparison

Detailed side-by-side comparison of BSS316NH6327XTSA1 by Infineon and BSS214NH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSS316NH6327XTSA1 BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon

BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon

BSS316NH6327XTSA1 βœ“ Active
Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSS316NH6327XTSA1 BSS214NH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.13 $0.09
FET Type N-Channel, Enhancement Mode N-Channel
Technology OptiMOS 2 (Trench) OptiMOS 2 (planar N-channel)
Drain-Source Voltage (VDS) 30 V 20 V
Continuous Drain Current (ID) at TA=25C 1.4 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Drain-Source On-Resistance RDS(on) max 160 mOhm at VGS=10V, ID=1.4A β€”
Gate-Source Threshold Voltage VGS(th) typ 2 V at ID=3.7 uA β€”
Total Gate Charge (Qg) 600 pC at VGS=5 V β€”
Input Capacitance (Ciss) 94 pF at VDS=15 V β€”
Output Capacitance (Coss) [DATA_NEEDED: output capacitance] β€”
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: reverse transfer capacitance] β€”
Maximum Power Dissipation (PD) at TA=25C 500 mW β€”
Operating Junction Temperature Range -55 C to +150 C β€”
Package PG-SOT23 (SOT-23-3) SOT-23 (PG-SOT23), 3 pins
Mounting Type Surface Mount Surface Mount
Lead Plating Pb-free (Matte Tin) β€”
MSL Level MSL1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Automotive Qualification AEC-Q101 qualified β€”
Continuous Drain Current (ID) β€” 1.5 A (Ta)
Power Dissipation (PD) β€” 500 mW (Ta)
Drain-Source On-Resistance (RDS(on) max) β€” 250 mOhm at VGS = 4.5 V
Gate-Source Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical and min/max values]
Gate-Source Voltage (VGS max) β€” Β±12 V (recommended)
Operating Temperature Range β€” -55C to +150C (junction)
Qualification β€” AEC-Q101 (Automotive)
Lead Finish β€” Pb-free lead plating (matte tin)
ESD Protection β€” Yes (gate ESD diode)

Datasheets & Resources

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