BSS316NH6327XTSA1 vs IRLML6346TRPBF Comparison

Detailed side-by-side comparison of BSS316NH6327XTSA1 by Infineon and IRLML6346TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSS316NH6327XTSA1 BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon

BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon

BSS316NH6327XTSA1 βœ“ Active
Infineon
IRLML6346TRPBF IRLML6346TRPBF - 30V 3.4A N-Ch HEXFET MOSFET | Infineon

IRLML6346TRPBF - 30V 3.4A N-Ch HEXFET MOSFET | Infineon

IRLML6346TRPBF βœ“ Active

Specification Comparison

Parameter BSS316NH6327XTSA1 IRLML6346TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.13 $0.18
FET Type N-Channel, Enhancement Mode β€”
Technology OptiMOS 2 (Trench) HEXFET Power MOSFET
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 1.4 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance RDS(on) max 160 mOhm at VGS=10V, ID=1.4A β€”
Gate-Source Threshold Voltage VGS(th) typ 2 V at ID=3.7 uA β€”
Total Gate Charge (Qg) 600 pC at VGS=5 V β€”
Input Capacitance (Ciss) 94 pF at VDS=15 V β€”
Output Capacitance (Coss) [DATA_NEEDED: output capacitance] β€”
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: reverse transfer capacitance] β€”
Maximum Power Dissipation (PD) at TA=25C 500 mW β€”
Operating Junction Temperature Range -55 C to +150 C β€”
Package PG-SOT23 (SOT-23-3) Micro3 / SOT-23
Mounting Type Surface Mount Surface Mount
Lead Plating Pb-free (Matte Tin) β€”
MSL Level MSL1 (per JEDEC J-STD-020) 1
RoHS Status Compliant Compliant
Automotive Qualification AEC-Q101 qualified β€”
Polarity β€” N-Channel
Continuous Drain Current (ID) β€” 3.4 A (TA=25C)
RDS(on) max @ VGS=2.5V β€” 63 mOhm
RDS(on) max @ VGS=4.5V β€” [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) value]
Gate Drive Capability β€” 2.5V logic-level
Maximum Power Dissipation (PD) β€” 1.3 W (TA=25C, 1in2 FR4)
Operating Junction Temperature β€” -55C to +150C
Lead-Free Finish β€” Yes (PBF suffix)

Datasheets & Resources

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