BSS816NWH6327XTSA1 vs BSS316NH6327XTSA1 Comparison
Detailed side-by-side comparison of BSS816NWH6327XTSA1 by Infineon and BSS316NH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSS816NWH6327XTSA1
BSS816NWH6327XTSA1 - 20V 1.4A N-Ch OptiMOS MOSFET | Infineon
BSS816NWH6327XTSA1 β Active
Specification Comparison
| Parameter | BSS816NWH6327XTSA1 | BSS316NH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.14 | $0.13 |
| Manufacturer | Infineon Technologies | β |
| Part Family | BSS816NW (OptiMOS 2 Small-Signal) | β |
| Transistor Type | MOSFET, N-Channel | β |
| Drain-Source Voltage (VDS) | 20 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | 1.4 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| RDS(on) max @ VGS=4.5V | 160 mOhm | β |
| RDS(on) max @ VGS=2.5V | [DATA_NEEDED: RDS(on) at 2.5V] | β |
| Power Dissipation (PD) at TA=25C | 500 mW | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | SOT-323 (PG-SOT323), 3-pin | PG-SOT23 (SOT-23-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | β |
| Technology | OptiMOS 2 trench MOSFET | OptiMOS 2 (Trench) |
| ESD Protection | Yes (integrated, per Infineon datasheet) | β |
| RoHS / Lead-Free | RoHS compliant, lead-free | β |
| MSL Level | 1 | MSL1 (per JEDEC J-STD-020) |
| FET Type | β | N-Channel, Enhancement Mode |
| Drain-Source On-Resistance RDS(on) max | β | 160 mOhm at VGS=10V, ID=1.4A |
| Gate-Source Threshold Voltage VGS(th) typ | β | 2 V at ID=3.7 uA |
| Total Gate Charge (Qg) | β | 600 pC at VGS=5 V |
| Input Capacitance (Ciss) | β | 94 pF at VDS=15 V |
| Output Capacitance (Coss) | β | [DATA_NEEDED: output capacitance] |
| Reverse Transfer Capacitance (Crss) | β | [DATA_NEEDED: reverse transfer capacitance] |
| Maximum Power Dissipation (PD) at TA=25C | β | 500 mW |
| Operating Junction Temperature Range | β | -55 C to +150 C |
| Lead Plating | β | Pb-free (Matte Tin) |
| RoHS Status | β | Compliant |
| Automotive Qualification | β | AEC-Q101 qualified |