BSS83PH6327XTSA1 vs 2N7002H6327XTSA2 Comparison
Detailed side-by-side comparison of BSS83PH6327XTSA1 by Infineon and 2N7002H6327XTSA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSS83PH6327XTSA1 | 2N7002H6327XTSA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.11 | $0.08 |
| FET Type | P-Channel | β |
| Technology | MOSFET (Metal-Oxide Semiconductor) | OptiMOS (Planar) |
| Drain-Source Voltage (VDS) | -60 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 330 mA | β |
| Pulsed Drain Current (IDM) | 1.3 A | β |
| Drain-Source On-Resistance (RDS(on)) at VGS=-10V | 2.0 ohm (max) | β |
| Gate-Source Threshold Voltage (VGS(th)) | -1 V to -2.5 V (typ) | β |
| Gate-Source Voltage (VGS) max | +/- 20 V | β |
| Power Dissipation (PD) at TA=25C | 360 mW | β |
| Operating Junction Temperature | -55 C to +150 C | β |
| Package | PG-SOT23 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | Automotive grade per Infineon | Industrial / Commercial Grade |
| Process Technology | SIPMOS / OptiMOS | β |
| RoHS Status | Compliant | Compliant |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) | β | 300 mA (Ta) |
| Power Dissipation (PD) | β | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | β | 3 ohm max @ VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | β | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |
| Operating Temperature Range | β | -55C to +150C (Tj) |
| Channel Mode | β | Enhancement |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Lead-Free | β | Yes |