BSS87H6327FTSA1 vs BSP316PH6327XTSA1 Comparison
Detailed side-by-side comparison of BSS87H6327FTSA1 by Infineon and BSP316PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223
BSP316PH6327XTSA1 β ActiveSpecification Comparison
| Parameter | BSS87H6327FTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.18 | $0.21 |
| FET Type | N-Channel enhancement-mode | P-Channel |
| Drain-Source Voltage (VDS) | 240 V | β |
| Continuous Drain Current (ID) | 260 mA (Ta) | β |
| Power Dissipation (PD) | 1 W (Ta) | β |
| Drain-Source On-Resistance (RDS(on)) | 6 ohm max at VGS=10V | β |
| Gate-Source Voltage (VGS) | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical] |
| Package | PG-SOT89-4-2 (SOT-89) | PG-SOT223-4 (TO-261-4) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | -55 C to +150 C (junction) |
| Pin Count | 3 (Gate / Drain / Source) | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Pb-Free | Yes (Pb-free plating) | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Process Technology | Vertical DMOS | β |
| Drain-to-Source Voltage (VDS) | β | -100 V |
| Continuous Drain Current (ID) at TA=25C | β | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | β | 1.8 W |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Number of Pins | β | 3 + thermal tab |
| Channel Mode | β | Enhancement |
| Technology | β | SIPMOS (P-channel MOSFET) |
| Packaging | β | Tape & Reel (H6327 suffix) |