BSS87H6327FTSA1 vs BSS127H6327XTSA2 Comparison
Detailed side-by-side comparison of BSS87H6327FTSA1 by Infineon and BSS127H6327XTSA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSS87H6327FTSA1 | BSS127H6327XTSA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.18 | $0.03 |
| FET Type | N-Channel enhancement-mode | N-Channel SIPMOS, enhancement mode |
| Drain-Source Voltage (VDS) | 240 V | 600 V |
| Continuous Drain Current (ID) | 260 mA (Ta) | 21 mA (Ta) |
| Power Dissipation (PD) | 1 W (Ta) | β |
| Drain-Source On-Resistance (RDS(on)) | 6 ohm max at VGS=10V | β |
| Gate-Source Voltage (VGS) | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 4.5 V (logic level, rated) |
| Package | PG-SOT89-4-2 (SOT-89) | SOT-23-3 (PG-SOT23) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Pin Count | 3 (Gate / Drain / Source) | 3 |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Status | Compliant | Compliant (lead-free) |
| Lead-Free / Pb-Free | Yes (Pb-free plating) | β |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Process Technology | Vertical DMOS | β |
| Pulsed Drain Current (ID,pulse) | β | [DATA_NEEDED: pulsed ID limit] |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| On-State Resistance (RDS(on)) max | β | 500 ohm at ID = 21 mA |
| Total Power Dissipation (Ptot) | β | 500 mW (Ta) |
| Operating Junction Temperature | β | -55 C to +150 C |
| dv/dt Rated | β | Yes |
| Halogen-Free | β | Yes, per IEC 61249-2-21 |