BSZ011NE2LS5IATMA1 vs BSC050NE2LSATMA1 Comparison
Detailed side-by-side comparison of BSZ011NE2LS5IATMA1 by Infineon and BSC050NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ011NE2LS5IATMA1
BSZ011NE2LS5IATMA1 - 25V 1.1mΞ© OptiMOS 5 N-MOSFET | Infineon
BSZ011NE2LS5IATMA1 β ActiveInfineon
BSC050NE2LSATMA1
BSC050NE2LSATMA1 - 25V 58A N-Ch OptiMOS MOSFET | Infineon
BSC050NE2LSATMA1 β ActiveSpecification Comparison
| Parameter | BSZ011NE2LS5IATMA1 | BSC050NE2LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.55 | $0.36 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 (Trench) | OptiMOS 25V (trench) |
| Drain-Source Voltage (VDS) | 25 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 35 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 40 A | β |
| On-State Resistance RDS(on) max at VGS=10 V | 1.1 mΞ© (typical, per datasheet title) | β |
| Power Dissipation at TA=25Β°C | 2.1 W | β |
| Power Dissipation at TC=25Β°C | 69 W | β |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (typical 1.5 V) | β |
| Gate Drive Voltage (recommended) | 4.5 V to 10 V | β |
| Operating Temperature Range | -55Β°C to +150Β°C | -55C to +150C |
| Package | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Drain-Source Voltage (V_DS) | β | 25 V |
| Continuous Drain Current (I_D) at Tc=25C | β | 58 A |
| Continuous Drain Current (I_D) at Ta=25C | β | 39 A |
| R_DS(on) max at V_GS=10V | β | 5 mOhm |
| R_DS(on) typical at V_GS=10V | β | 4.2 mOhm |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical] |
| Power Dissipation at Ta=25C | β | 2.5 W |
| Power Dissipation at Tc=25C | β | 28 W |