BSZ011NE2LS5IATMA1 vs BSZ018NE2LSIATMA1 Comparison
Detailed side-by-side comparison of BSZ011NE2LS5IATMA1 by Infineon and BSZ018NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ011NE2LS5IATMA1
BSZ011NE2LS5IATMA1 - 25V 1.1mΞ© OptiMOS 5 N-MOSFET | Infineon
BSZ011NE2LS5IATMA1 β ActiveInfineon
BSZ018NE2LSIATMA1 - 25V N-Ch OptiMOS 1.8mOhm MOSFET | Infineon
BSZ018NE2LSIATMA1 β ActiveSpecification Comparison
| Parameter | BSZ011NE2LS5IATMA1 | BSZ018NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.55 | $0.39 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (Trench) | OptiMOS (Infineon trench MOSFET) |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at TA=25Β°C | 35 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 40 A | β |
| On-State Resistance RDS(on) max at VGS=10 V | 1.1 mΞ© (typical, per datasheet title) | β |
| Power Dissipation at TA=25Β°C | 2.1 W | β |
| Power Dissipation at TC=25Β°C | 69 W | β |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (typical 1.5 V) | β |
| Gate Drive Voltage (recommended) | 4.5 V to 10 V | β |
| Operating Temperature Range | -55Β°C to +150Β°C | -55 C to +150 C |
| Package | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSZ018NE2LSIATMA1 |
| Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | β | 22 A |
| Continuous Drain Current (ID) at Tc=25C | β | 40 A |
| Pulsed Drain Current (IDM) | β | 160 A |
| Typical On-Resistance RDS(on) at VGS=10V | β | 1.8 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation at Ta=25C | β | 2.1 W |
| Power Dissipation at Tc=25C | β | 69 W |