BSZ011NE2LS5IATMA1 vs BSZ070N08LS5ATMA1 Comparison
Detailed side-by-side comparison of BSZ011NE2LS5IATMA1 by Infineon and BSZ070N08LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ011NE2LS5IATMA1
BSZ011NE2LS5IATMA1 - 25V 1.1mΞ© OptiMOS 5 N-MOSFET | Infineon
BSZ011NE2LS5IATMA1 β ActiveInfineon
BSZ070N08LS5ATMA1
BSZ070N08LS5ATMA1 - 80V 7mΞ© OptiMOS 5 N-FET | Infineon
BSZ070N08LS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSZ011NE2LS5IATMA1 | BSZ070N08LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.55 | $0.78 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (Trench) | β |
| Drain-Source Voltage (VDS) | 25 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 35 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 40 A | β |
| On-State Resistance RDS(on) max at VGS=10 V | 1.1 mΞ© (typical, per datasheet title) | β |
| Power Dissipation at TA=25Β°C | 2.1 W | β |
| Power Dissipation at TC=25Β°C | 69 W | β |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (typical 1.5 V) | Logic-level (drive compatible with 4.5 V) |
| Gate Drive Voltage (recommended) | 4.5 V to 10 V | β |
| Operating Temperature Range | -55Β°C to +150Β°C | β |
| Package | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, unleaded reflow) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOSβ’ 5 (80 V logic-level) |
| Polarity / Channel Type | β | N-Channel enhancement mode |
| Drain-Source Voltage (VDS) max | β | 80 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at TC | β | 74 A (Tc, per datasheet) |
| Continuous Drain Current (ID) at TA / Si | β | [DATA_NEEDED: TA-rated ID] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulsed] |
| On-Resistance RDS(on) max @ VGS=10 V | β | 7 mΞ© |
| On-Resistance RDS(on) @ VGS=4.5 V | β | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total Qg] |
| Power Dissition PD max at TC | β | 69 W |
| Operating Junction Temperature | β | -55 Β°C to +150 Β°C |
| Avalanche Rated | β | Yes |
| Reel Quantity | β | 5000 per 13-inch reel (T&R) |